[21p-PB5-1~3] 15.1 Bulk crystal growth

[21p-PB5-1] Bulk Single Crystal Growth of Copper Iodide and Physical Property

〇(DC)Satoshi Koyasu¹, Baniecki Jhon², Naoto Umezawa^3,4, Akira Yamaguchi¹, Masahiro Miyauchi¹ (1.Tokyo Tech., 2.Fujitsu, 3.NIMS, 4.Samsung)

Keywords:single crystal, semiconductor, copper iodide

Recently, application of copper iodide (CuI) for electronic devices is researched actively. Especially, CuI is used as hole transport layer of organo-lead halide solar cells. These organo-lead halide solar cells attained high energy conversion efficiency. It is important to know position of valence band and Fermi level etc. because these properties effect the property of devices when heterojunction of semiconductor is used as devices. In this study, we grow the single crystal of CuI by solution growth method, and measure the intrinsic electronic property of CuI it is need for design of electronic devices.