Oral presentation

13 Semiconductors » 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[17p-F314-1~13] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

Sat. Mar 17, 2018 2:00 PM - 5:30 PM F314 (61-314)

Yukihiro Harada(Kobe Univ.), Haruki Sanada(NTT)

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▲：英語発表
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2:00 PM - 2:15 PM

[17p-F314-1] Optical properties of CdTe quantum dot superlattices prepared by layer-by-layer assembly

〇Taegi Lee¹, Kazuma Ohshiro¹, Daegwi Kim¹ (1.Osaka City Univ.)

2:15 PM - 2:30 PM

△ [17p-F314-2] Influence of localized state on photoluminescence dynamics in CdTe/CdS quantum dots

〇Taichi Watanabe¹, DaeGwi Kim¹ (1.Osaka City Univ.)

2:30 PM - 2:45 PM

[17p-F314-3] Ligand Density Control of Core/Shell-Type CdZnS/ZnS Quantum Dots

〇Yuya Takeda¹, Yong-Jin Pu² (1.Yamagata Univ., 2.RIKEN)

2:45 PM - 3:00 PM

[17p-F314-4] Hot biexciton effect on optical responses of CsPbI₃ nanocrystals

〇Go Yumoto¹, Hirokazu Tahara¹, Tokuhisa Kawawaki¹, Masaki Saruyama¹, Ryota Sato¹, Toshiharu Teranishi¹, Yoshihiko Kanemitsu¹ (1.Institute for Chemical Research, Kyoto University)

3:00 PM - 3:15 PM

[17p-F314-5] Observation of electron diffusion process in silicon substrate using energy transfer

〇Osamu Kojima¹, Yukako Ito¹, Takashi Kita¹ (1.Kobe Univ)

3:15 PM - 3:30 PM

[17p-F314-6] The mechanisms and control of InAs/GaAs submonolayer growth

〇(M1)Hiroto Mizuno¹, Yuwei Zhang¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

3:30 PM - 3:45 PM

[17p-F314-7] Core-shell dual-gated InAs nanotube FET

〇Satoshi Sasaki¹, Kouta Tateno¹, Guoqiang Zhang¹ (1.NTT BRL)

4:00 PM - 4:15 PM

[17p-F314-8] Fabrication and characterization of GaN/AlN polycrystalline superlattices grown on
Si (001) substrate by RF-MBE

〇Takeru Norikane¹, Yutaka Ogasawara¹, Kazuhiro Morishita¹, Mai Kunimitsu², Takashi Kuraoka², yuichi Fujisawa², Yusuke Yamashita², Changsu Kim³, Hidefumi Akiyama³, Yasuhiro Tanaka², Hayato Miyagawa², Syun Koshiba² (1.Grad. Sch., Kagawa Univ., 2.Kagawa Univ., 3.ISSP)

4:15 PM - 4:30 PM

▲ [17p-F314-9] Thermionic Refrigeration Effect Based on Semiconductor Heterostructures

〇(M2)Tifei Yan¹, Aymen Yangui^1,2, Marc Bescond^1,2, Naomi Nagai¹, Kazuhiko Hirakawa^1,2,3 (1.IIS, 2.LIMMS, 3.INQIE)

4:30 PM - 4:45 PM

△ [17p-F314-10] Top gate voltage dependence of g-factor in p-type silicon quantum dots

〇(M2)Naoki Shimatani¹, Yu Yamaoka¹, Kodera Tetsuo¹ (1.Tokyo Tech)

4:45 PM - 5:00 PM

[17p-F314-11] Sign identi cation of electron and hole g factors in single quantum dots

〇Ryousuke Matsusaki¹, Souta Yamamoto¹, Reina Kaji¹, Hirotaka Sasakura¹, Satoru Adachi¹ (1.Hokkaido Univ.)

5:00 PM - 5:15 PM

[17p-F314-12] Nuclear quadrupolar effect on the formation of in-plane nuclear field in a single quantum dot II

〇(M2)Souta Yamamoto¹, Ryousuke Matsusaki¹, Reina Kaji¹, Satoru Adachi¹ (1.Hokkaido Univ.)

5:15 PM - 5:30 PM

[17p-F314-13] Spin relaxation time of GaSb/AlSb multiple quantum wells (Ⅱ)

〇Yuichi Nakamura¹, Lianhe Li², Kizuku Yamada¹, Takuya Kamezaki¹, Edmund Linfield², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.Univ of Leeds)

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