Poster presentation

3 Optics and Photonics » 3.13 Semiconductor optical devices

[17p-P3-1~22] 3.13 Semiconductor optical devices

Sat. Mar 17, 2018 1:30 PM - 3:30 PM P3 (P)

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1:30 PM - 3:30 PM

[17p-P3-1] Fabrication of polycrystalline selenium with high crystallinity and surface flatness using lateral grain growth by the effect of surface capping

〇Shigeyuki Imura¹, Keitada Mineo¹, Kazunori Miyakawa¹, Masakazu Nanba¹, Hiroshi Ohtake¹, Misao Kubota¹ (1.NHK STRL)

1:30 PM - 3:30 PM

[17p-P3-2] Red Up-conversion luminescence evaluation in crystal (CaMoO₄: Yb³⁺ / Tm³⁺, Ho³⁺) by Ce³⁺ doping

〇Takuto Ouruma¹, Ban Takahiko¹, Yamanoto Shin-ichi¹ (1.Ryukoku Univ.)

1:30 PM - 3:30 PM

[17p-P3-3] Luminescence Characterization of the Up-Conversion Phosphors using AlF₃material

〇Seiya Okamoto¹, Shin-Ichi Yamamoto¹, Takahiko Ban¹ (1.Ryukoku Univ.)

1:30 PM - 3:30 PM

[17p-P3-4] Phosphorescence Body with visible Long-Lasting Using Upconversion Luminescence

〇Ryoya Oto¹, Takuto Ouruma¹, Takahiko Ban¹, Shin-Ichi Yamamoto¹ (1.Ryukoku Univ.)

1:30 PM - 3:30 PM

[17p-P3-5] Evaluation of Phosphorescent Pigment SrAl₂O₄: Eu^{2 +}, Dy ^{3 +}different firing atmosphere.

〇Takahiro Taniguchi¹, Ban Takahiko¹, Yamamoto Shin-Ichi¹ (1.Ryukoku Univ.)

1:30 PM - 3:30 PM

[17p-P3-6] Enhanced luminescence of thin film phosphors by multilayer coating

〇Tatsuya Ikeda¹, Takuto Ouruma¹, Takahiko Ban¹, Shin-Ichi Yamamoto¹ (1.Ryukoku Univ.)

1:30 PM - 3:30 PM

[17p-P3-7] Characterization of Up-converting phosphors from Yb³⁺, Er³⁺ co-doped SrMoO₄

〇Sho Sasaki¹, Takuto Ouruma¹, Takahiko Ban¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

1:30 PM - 3:30 PM

[17p-P3-8] Characterization of carbon nitride thin films using MgO powder

〇Shingo Yoshioka¹, Shin-ichi Yamamoto¹, Takahiko Ban¹, Kunio Ito¹ (1.Ryukoku Univ.)

1:30 PM - 3:30 PM

[17p-P3-9] Luminescence characteristics by gas pressure effects on the structure of CN thin films

〇Kazuki Imai¹, Kohei Shimada¹, Shingo Yoshioka¹, Kunio Itoh¹, Takahiko Ban¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

1:30 PM - 3:30 PM

[17p-P3-10] Luminescence characteristics of CN thin film grown on a MgO surface

〇Kohei Shimada¹, Kazuki Imai¹, Shingo Yoshioka¹, Kunio Itoh¹, Takahiko Ban¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

1:30 PM - 3:30 PM

[17p-P3-11] Optimum thickness of Al-doped ZnO conductive film deposited on porous silicon

〇(M1)Taiki Akiyama¹, Koji Mramatsu¹, Lianhua Jin¹, Eiichi Kondoh¹, Bernard Gelloz² (1.Univ. of Yamanashi, 2.Nagoya Univ)

1:30 PM - 3:30 PM

[17p-P3-12] Research of Optical Memory Waveguide Using Photochromic Materials in core layer.

〇Keisuke Tanimoto¹, Youhei Asahara¹, Yoshiteru Amemiya¹, Shin Yokoyama¹ (1.Res. Inst. for Nanodevice and Bio Syst. Hiroshima Univ.)

1:30 PM - 3:30 PM

[17p-P3-13] Basic Technology of Monolithic Optical Neural Network

〇Taichi Uruma^1,2, Tetsuo Tabei¹, Yoshiteru Amemiya¹, Tadashi Sato¹, Shinji Yamada¹, Kazushi Okada¹, Shin Yokoyama^1,2 (1.Res. Int. for Nanodevice and Bio Systems, Hiroshima Univ., 2.Graduate School of Advanced Sciences of Matter, Hiroshima Univ.)

1:30 PM - 3:30 PM

[17p-P3-14] Fabrication and characterization of a gain chip based on InAs QDs for a swept source

〇(M1)Katsuya Onoue¹, Daigo Ikuno¹, Syo Yamauchi¹, Nobuhiko Ozaki¹, Hirotaka Ohsato², Eiichirou Watanabe², Naoki Ikeda², Yoshimasa Sugimoto², Kenji Furuki³, Youichi Oikawa³, Kunio Miyaji³, D. T. D. Childs⁴, R. A. Hogg⁴ (1.Wakayama Univ., 2.NIMS, 3.Think Lands co., Ltd, 4.Univ. Glasgow)

1:30 PM - 3:30 PM

[17p-P3-15] Construction of Swept Source-OCT using a wavelength tunable laser based on InAs quantum dots and verification of effectiveness to image depth extension

〇Sho Yamauchi¹, Nobuhiko Ozaki¹, Hirotaka Ohsato², Eiichiro Watanabe², Naoki Ikeda², Yoshimasa Sugimoto², Kenji Furuki³, Kunio Miyaji³, Yoichi Oikawa³, David Childs⁴, Richard Hogg⁴ (1.Wakayama Univ., 2.NIMS, 3.Think Lands Co., Ltd., 4.Univ. Glasgow)

1:30 PM - 3:30 PM

[17p-P3-16] 4.5um low power consumption quantum cascade laser

〇Kousuke Shibata¹, Atsushi Sugiyama¹, Takahide Ochiai¹, Naota Akikusa¹ (1.HAMAMASTU PHOTONICS)

1:30 PM - 3:30 PM

[17p-P3-17] Swept quantum cascade laser with MEMS grating

〇Atsushi Sugiyama¹, Naota Akikusa¹, Tadataka Edamura¹ (1.hamamatsu photonics)

1:30 PM - 3:30 PM

[17p-P3-18] GaInAsP / GaInAsP SCH-MQW laser diode on wafer bonded InP/Si substrate

〇Hirokazu Sugiyama¹, Naoki Kamada¹, Yuya Onuki¹, Xu Han¹, Kazuki Uchida¹, Gandhi Kallarasan Periyanayagam¹, Masaki Aikawa¹, Natsuki Hayasaka¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

1:30 PM - 3:30 PM

[17p-P3-19] Room temperature lasing of 1.5mm wavelength GaInAsP ridge laser diode
on wafer bonded InP/Si substrate

〇Kazuki Uchida¹, Naoki Kamada¹, Yuya Onuki¹, Xu Han¹, Gandi Kallarasan Periyanayagam¹, Hirokazu Sugiyamja¹, Masaki Aikawa¹, Natsuki Hayasaka¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

1:30 PM - 3:30 PM

[17p-P3-20] Annealing temperature time dependence on void opccupancy of directly-bonded InP/Si substrate

〇(M1)Natsuki Hayasaka¹, Yuya Onuki¹, Naoki Kamada¹, Xu Han¹, Masaki Aikawa¹, Kazuki Uchida¹, Hirokazu Sugiyama¹, Masaki Matsuura¹, Gandhi Kallarasan Periyanayagam¹, Hiromi Yada¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

1:30 PM - 3:30 PM

[17p-P3-21] Cavity length dependence on threshold current density of 1.5µm wavelength GaInAsP stripe laser diode on wafer bonded InP/Si substrate

〇(B)Hiromu Yada¹, Naoki Kamada¹, Yuya Onuki¹, Han Xu¹, Gandhi Kallarasan Periyanayagam¹, Masaki Aikawa¹, Kazuki Uchida¹, Hirokazu Sugiyama¹, Natsuki Hayasaka¹, Shigemasa Sato¹, Masaki Matsuura¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

1:30 PM - 3:30 PM

△ [17p-P3-22] Analysis of voltage modulation large signal characteristics considering electrical response in 1.3 - μm band npn - AlGaInAs / InP transistor laser

〇Yusei Goto¹, Kentaro Yamanaka¹, Shoich Yoshitomi¹, Nobuhiko Nishiyama^1,2, Shigehisa Arai^1,2 (1.Tokyo Tech., 2.IIR.)

Session information

[17p-P3-1~22] 3.13 Semiconductor optical devices

[17p-P3-1] Fabrication of polycrystalline selenium with high crystallinity and surface flatness using lateral grain growth by the effect of surface capping

[17p-P3-2] Red Up-conversion luminescence evaluation in crystal (CaMoO₄: Yb³⁺ / Tm³⁺, Ho³⁺) by Ce³⁺ doping

[17p-P3-3] Luminescence Characterization of the Up-Conversion Phosphors using AlF₃material

[17p-P3-4] Phosphorescence Body with visible Long-Lasting Using Upconversion Luminescence

[17p-P3-5] Evaluation of Phosphorescent Pigment SrAl₂O₄: Eu^{2 +}, Dy ^{3 +}different firing atmosphere.

[17p-P3-6] Enhanced luminescence of thin film phosphors by multilayer coating

[17p-P3-7] Characterization of Up-converting phosphors from Yb³⁺, Er³⁺ co-doped SrMoO₄

[17p-P3-8] Characterization of carbon nitride thin films using MgO powder

[17p-P3-9] Luminescence characteristics by gas pressure effects on the structure of CN thin films

[17p-P3-10] Luminescence characteristics of CN thin film grown on a MgO surface

[17p-P3-11] Optimum thickness of Al-doped ZnO conductive film deposited on porous silicon

[17p-P3-12] Research of Optical Memory Waveguide Using Photochromic Materials in core layer.

[17p-P3-13] Basic Technology of Monolithic Optical Neural Network

[17p-P3-14] Fabrication and characterization of a gain chip based on InAs QDs for a swept source

[17p-P3-15] Construction of Swept Source-OCT using a wavelength tunable laser based on InAs quantum dots and verification of effectiveness to image depth extension

[17p-P3-16] 4.5um low power consumption quantum cascade laser

[17p-P3-17] Swept quantum cascade laser with MEMS grating

[17p-P3-18] GaInAsP / GaInAsP SCH-MQW laser diode on wafer bonded InP/Si substrate

[17p-P3-19] Room temperature lasing of 1.5mm wavelength GaInAsP ridge laser diode
on wafer bonded InP/Si substrate

[17p-P3-20] Annealing temperature time dependence on void opccupancy of directly-bonded InP/Si substrate

[17p-P3-21] Cavity length dependence on threshold current density of 1.5µm wavelength GaInAsP stripe laser diode on wafer bonded InP/Si substrate

△ [17p-P3-22] Analysis of voltage modulation large signal characteristics considering electrical response in 1.3 - μm band npn - AlGaInAs / InP transistor laser

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