[18a-E202-1~10] 15.4 III-V-group nitride crystals

Sun. Mar 18, 2018 9:00 AM - 11:45 AM E202 (57-202)

Narihito Okada(Yamaguchi Univ.), Shugo Nitta(Nagoya Univ.)

△：奨励賞エントリー
▲：英語発表
▼：奨励賞エントリーかつ英語発表
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9:00 AM - 9:15 AM

[18a-E202-1] Effects of NH₃/H₂ ratio on the polycrystal formation during GaN growth using OVPE method

〇Shintaro Tsuno¹, Yoshikazu Gunji¹, Yohei Yamaguchi¹, Keiju Ishibashi¹, Akira Kitamoto¹, Msayuki Imanishi¹, Mamoru Imade¹, Masashi Yoshimura¹, Masashi Isemura², Tomoaki Sumi³, Junichi Takino^1,3, Yoshio Okayama^1,3, Masaki Nobuoka³, Yusuke Mori¹ (1.Osaka Univ., 2.Itochu Plastics Inc., 3.Panasonic Corporation)

9:15 AM - 9:30 AM

[18a-E202-2] Effect of Mathane Additive on GaN Growth using OVPE Method

〇Akira Kitamoto¹, Yohei Yamaguchi¹, Shintaro Tsuno¹, Keiju Ishibashi¹, Yoshikazu Gunji¹, Masayuki Imanishi¹, Mamoru Imade¹, Masashi Yoshimura¹, Masashi Isemura², Tomoaki Sumi³, Junichi Takino^1,3, Yoshio Okayama^1,3, Masaki Nobuoka³, Yusuke Mori¹ (1.Osaka Univ., 2.Itochu Plastics Inc., 3.Panasonic Corporation)

9:30 AM - 9:45 AM

[18a-E202-3] Improvement of surface flatness of HVPE-grown homo-epitaxial GaN layers

〇Hajime Fujikura¹, Taichiro Konno¹ (1.SCIOCS)

9:45 AM - 10:00 AM

▼ [18a-E202-4] Study of showerhead nozzle configuration in vertical HVPE reactor for large size bulk GaN

〇(DC)Qiang Liu¹, Naoki Fujimoto², Shugo Nitta², Yashio Honda², Hiroshi Amano^2,3,4 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.ARC, Nagoya Univ., 4.VBL, Nagoya Univ.)

10:00 AM - 10:15 AM

[18a-E202-5] Facet growth of GaN with low dislocation density using Ga,N double polarity
by Hydride Vapor Phase Epitaxy

〇Tatsuya Ezaki¹, Yusuke Shigefuji², Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Grad. School of Sci. & Technology for Innovation Yamaguchi Univ., 2.Department of Eng., Yamaguchi Univ.)

10:30 AM - 10:45 AM

[18a-E202-6] Influence of off angle of stripe-mask on selective area growth and crystalline quality of GaN by hydride vapor phase epitaxy

〇Fijun Kim¹, Hiroki Ikeuchi², Ryo Inomoto², Narihito Okada², Kazuyuki Tadatomo² (1.Department of Eng.,Yamaguchi Univ., 2.Grad.School of Sci.&Tech.for Innovation,Yamaguchi Univ.)

10:45 AM - 11:00 AM

[18a-E202-7] Growth of thick GaN crystals on (000<span style="text-decoration:overline;">1</span>) GaN substrates by HVPE

〇Masaya Kanoh¹, Tomoyuki Tanikawa², Takashi Mukai¹, Takashi Matsuoka² (1.Nichia Corp., 2.IMR, Tohoku Univ.)

11:00 AM - 11:15 AM

[18a-E202-8] Growth of AlGaN thin layer by HVPE

〇Daiki Tanaka^1,2, Kentaro Nagamatsu³, Hisashi Yamada², Toshikazu Yamada², Yoshinao Kumagai^4,3, Shugo Nitta³, Yoshio Honda³, Mitsuaki Shimizu², Hiroshi Amano^3,5,6 (1.Nagoya Univ, 2.AIST GaN-OIL, 3.Nagoya Univ.IMaSS, 4.Tokyo Univ.of Agri&Tech, 5.Nagoya Univ.ARC, 6.Nagoya Univ.VBL)

11:15 AM - 11:30 AM

△ [18a-E202-9] P-type conductivity of AlN films grown by elementary source vapor phase epitaxy (EVPE)

〇Katsuhiro Kishimoto¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

11:30 AM - 11:45 AM

[18a-E202-10] Fabrication of GaN micro hexagonal frustum for high directional micro-LED (2)

〇Naoto Kumagai¹, Tokio Takahashi¹, Guangwei Cong¹, Xuelun Wang¹, Misato Satoshi¹ (1.AIST)

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