Session information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[19a-F202-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 19, 2018 9:30 AM - 12:15 PM F202 (61-202)

Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.)

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9:30 AM - 9:45 AM

▲ [19a-F202-1] Investigation on p-BaSi₂/n-Si heterojunction solar cells using a Si(001) substrate

〇Tianguo Deng¹, Takuma Sato¹, Zhihao Xu¹, Ryota Takabe¹, Suguru Yachi¹, Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

9:45 AM - 10:00 AM

△ [19a-F202-2] Fabrication of BaSi₂ p-n homojunction solar cells by molecular beam epitaxy

〇Komomo Kodama¹, Toko Kaoru¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

10:00 AM - 10:15 AM

[19a-F202-3] Control of initial process in BaSi₂ thermal evaporation for p-type BaSi₂/n-type crystalline Si solar cells with high open-circuit voltage

〇(M1)Michinobu Fujiwara¹, Kazuma Takahashi¹, Yoshihiko Nakagawa¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Takashi Itoh¹, Noritaka Usami¹ (1.Nagoya Univ.)

10:15 AM - 10:30 AM

[19a-F202-4] Effect of ITO heating deposition on the performance of p-BaSi₂/n-Si hetero junction solar cells

〇(B)Ryota Sugiyama¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

10:30 AM - 10:45 AM

[19a-F202-5] Preparation of BaSi₂ thin films on micro-textured glass substrates and evaluation of optical properties

〇(DC)Yoshihiko Nakagawa¹, Robin Vismara², Thomas Loef², Yilei Tian², Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Olindo Isabella², Miro Zeman², Noritaka Usami¹ (1.Nagoya Univ., 2.TUDelft)

11:00 AM - 11:15 AM

[19a-F202-6] Characterization of Ion-Beam-Synthesized β-FeSi₂ Films Using a Slow Positron Beam

〇Atsushi YABUUCHI¹, Atsushi Kinomura¹, Masaki Maekawa², Atsuo Kawasuso² (1.Kyoto Univ., 2.QST)

11:15 AM - 11:30 AM

[19a-F202-7] Influence of post-annealing on the defect properties of BaSi₂ light absorption layers

〇Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

11:30 AM - 11:45 AM

[19a-F202-8] Thickness and Ba/Si deposition rate ratio of Raman spectra of BaSi₂ epitaxial films

〇Takuma Sato¹, Ryota Takabe¹, Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

11:45 AM - 12:00 PM

▲ [19a-F202-9] Visible- Light Driven Photocatalytic Activity of β-In₂S₃Indium Sulfide Quantum Dots and β-In₂S₃/Ag Nanohybrid Structures

〇(D)Anitha Dharmalingam¹, Anita R Warrier¹ (1.NANOPHOTONICS RESEARCH LABORATORY, AMET UNIV. ,CHENNAI 603112)

12:00 PM - 12:15 PM

[19a-F202-10] Electronic structure of interstitial hydrogen in wide gap semiconductor IGZO and ZnO

〇Kenji Kojima¹, Masatoshi Hiraishi¹, Hirotaka Okabe¹, Akihiro Koda¹, Ryosuke Kadono¹, Andreas Suter², Thomas Prokscha², Zahar Salman², Naoki Ohashi³, Keisuke Ide⁴, Satoru Matsuishi⁴, Toshio Kamiya⁴, Hideya Kumomi⁴, Hideo Hosono⁴ (1.KEK-IMSS, 2.PSI-LMU, 3.NIMS, 4.Tokyo Inst. Tech)

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Session information

[19a-F202-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [19a-F202-1] Investigation on p-BaSi2/n-Si heterojunction solar cells using a Si(001) substrate

△ [19a-F202-2] Fabrication of BaSi2 p-n homojunction solar cells by molecular beam epitaxy

[19a-F202-3] Control of initial process in BaSi2 thermal evaporation for p-type BaSi2/n-type crystalline Si solar cells with high open-circuit voltage

[19a-F202-4] Effect of ITO heating deposition on the performance of p-BaSi2/n-Si hetero junction solar cells

[19a-F202-5] Preparation of BaSi2 thin films on micro-textured glass substrates and evaluation of optical properties

[19a-F202-6] Characterization of Ion-Beam-Synthesized β-FeSi2 Films Using a Slow Positron Beam

[19a-F202-7] Influence of post-annealing on the defect properties of BaSi2 light absorption layers

[19a-F202-8] Thickness and Ba/Si deposition rate ratio of Raman spectra of BaSi2 epitaxial films

▲ [19a-F202-9] Visible- Light Driven Photocatalytic Activity of β-In2S3 Indium Sulfide Quantum Dots and β-In2S3 /Ag Nanohybrid Structures