〇Takanobu Watanabe¹, Shuichiro Hashimoto¹, Motohiro Tomita^1,2, Masashi Kurosawa^3,4, Hiroya Ikeda⁵ (1.Waseda Univ., 2.JSPS Research Fellow, 3.Nagoya Univ., 4.JST-PRESTO, 5.Shizuoka Univ.)

Sessions

Symposium » Ge Technology - Electron / Photon / Phonon / Spin - Innovation of Group-IV Semiconductors -

[18p-C304-1~11] Ge Technology - Electron / Photon / Phonon / Spin - Innovation of Group-IV Semiconductors -

[18p-C304-1] Opening Remarks

[18p-C304-2] Interfacing field control of germanium for electron device applications

[18p-C304-3] High Density Formation of Si-Ge Based Core-Shell Quantum Structures and Control of Their Optical and Electronic Properties

[18p-C304-4] Conduction band structure modulation in Ultrathin Ge layer

[18p-C304-5] Barrier height control for metal/Ge contact by using transition-metal nitride

[18p-C304-6] Mid-infrared Integrated Photonics based on Germanium

[18p-C304-7] Physics and Applications for Germanium Spintronic Devices

[18p-C304-8] Development of high-quality single-crystal ferromagnetic thin films compatible with Ge and the spin-dependent transport in their heterostructures

[18p-C304-9] Enhancement of hole mobility in Ge(Si) thin films on an insulator by large-grain solid-phase crystallization

[18p-C304-10] Transport Control of Electron and Phonon by nanostructuring of Si-based semiconductors for application to thermoelectric materials

[18p-C304-11] Applicability of Group-IV Alloys to Micro Thermoelectric Generators

Authentication