[17a-B301-1~12] 15.1 Bulk crystal growth

[17a-B301-9] Three-Dimensional Simulation of Transport Phenomena during Crystal Growth of SiC by using RF-TSSG Method

〇Yasunori Okano¹, Lai Wang¹, Takashi Horiuchi¹, Atsushi Sekimoto¹, Toru Ujihara² (1.Osaka Univ., 2.Nagoya Univ.)

Keywords:Numerical simulation, Transport phenomena, Silicon carbide

A three dimensional simulation of transport phenomena during crystal growth of SiC by RF-TSSG method was carried out. It was found that flow, temperature and concentration fields were unsteady due to Marangoni convection and a three dimensional transport structure such as a hydrothermal wave around the center axis was observed although both of crucible and crystal were kept stationary.