[17a-C202-1~7] 17.2 Graphene

[17a-C202-1] [INVITED] From Group-IV GSMBE to Graphene-on-Silicon Technology: a Brief History

〇Maki Suemitsu¹ (1.RIEC, Tohoku Univ.)

Keywords:graphene, 3C-SiC, GSMBE

A brief history from the Si GSMBE to graphene-on-silicon (GOS) technology is reviewed. GSMBE, which allows us to grow epitaxial Si films at low temperatures by using chemical compound molecular beam under ultrahigh vacuum, was later on extended towards SiGe, P-doped Si, SiC, and eventually to GOS. Despite the variety of topics that varied with the times, surface chemistry has always been a key concept that drove the researches.