[17a-E202-1~10] 15.4 III-V-group nitride crystals

[17a-E202-8] Formation of high-density (> 10¹¹ cm^-2) InGaN quantum dots by MOCVD

〇Munetaka Arita¹, Yang Mei^2,3, Yasuhiko Arakawa^1,2 (1.NanoQuine, Univ. Tokyo, 2.IIS, Univ. Tokyo, 3.Xiamen Univ.)

Keywords:quantum dots, InGaN

We demonstrate that high-density (> 10¹¹ cm^-2) InGaN quantum dots can be formed by MOCVD, after optimizing the growth conditions.