[17a-F206-1~13] 13.3 Insulator technology

[17a-F206-6] Re-consideration for phonon transition rate assumed in formula of Mott variable-range hopping

〇Michiru Hogyoku¹, Takashi Izumida¹, Hiroyoshi Tanimoto¹, Nobutoshi Aoki¹, Seiji Onoue¹ (1.Toshiba Memory Corp.)

Keywords:variable-range hopping, multi-phonon transition

Through taking into account the multi-phonon transition, we have generalized the Mott variable-range hopping (Mott-VRH) and developed its novel version, in 2015. In this report, we clarify how effects of the multi-phonon transition modulate temperature dependence of the electrical conductivity predicted by the original Mott-VRH model.