The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.9 Compound solar cells

[17a-F310-1~11] 13.9 Compound solar cells

Sat. Mar 17, 2018 9:00 AM - 12:00 PM F310 (61-310)

Hisashi Miyazaki(National Defense Academy)

11:45 AM - 12:00 PM

[17a-F310-11] Deposition of CuGaS2 thin films deposited by magnetron sputtering

〇(M1)Hiroya Matsubayashi1, Nazmul Ahsan2, Kim Myeongok3, Yoshitaka Okada1,2 (1.Elec. Eng. UTokyo, 2.RCAST UTokyo, 3.Col. Arts and Sci. UTokyo)

Keywords:chalcopyrite semiconductor, solar cell, magnetron sputtering

Chalcopyrite based materials have lager absorption coefficient and can make thin-film solar cells compared with single crystal silicon. On the other hand, multi-junction solar cells and intermediate band solar cells are gaining much attention as new structures exceeding the theoretical conversion efficiency of single-junction solar cells. Therefore, we focus on the next generation type solar cell based on wide-gap chalcopyrite semiconductors. A series of CuGaS2 thin-films were deposited on glass substrates by magnetron sputtering, and their crystallinities are characterized.