[17p-B403-1~17] 3.5 レーザー装置・材料

▲ [17p-B403-14] Optimization of Distributed Face Cooling structure for high average power applications

〇(D)Arvydas Kausas¹、Lihe Zheng¹、Takunori Taira¹ (1.Inst. for Molecular Science)

キーワード：distributed face cooling, thermal lensing, Surface activated bonding

By using Surface Activated Bonding technology, we produced 9-chip crystal consisting of five Sapphire crystals and four Nd³⁺:YAG crystals. Fiber coupled CW diode laser with maximum incident pump power 86 W was used and the output power reached 46 W. The slope efficiency under continuous wave (CW) pump power was 64.6%.