[17p-E202-1~19] 15.4 III-V-group nitride crystals

[17p-E202-19] Variation of Surface and Bulk Electronic Structures of In-rich InGaN

〇Masataka Imura¹, Shunsuke Tsuda¹, Takahiro Nagata¹, Yoshiyuki Yamashita^1,2, Hideki Yoshikawa^1,2, Keisuke Kobayashi^1,2, Yasuo Koide¹, Tomohiro Yamaguchi^3,4, Masamitsu Kaneko⁴, Nao Uematsu⁴, Tsutomu Araki⁴, Yasushi Nanishi⁴ (1.NIMS, 2.SPring-8 NIMS, 3.Kogakuin Univ., 4.Ritsumeikan Univ.)

Keywords:InGaN, Hard X-ray photoelectron spectroscopy

In-rich InGaN is an attractive III-nitride semiconductor material to realize the potential of InN- based optical and electrical device applications. However, one of the serious problems observed is the formation of n⁺ surface electron accumulation (SEA) layer in the epilayer. Although several techniques have been adopted to evaluate the SEA layer and buried deep-bulk properties of u-InN and InN:Mg, the analysis remains complex and the surface and bulk properties have not yet been fully understood. Hence in this study, the surface and bulk electronic structures of In-rich InGaN:Mg were evaluated by Hard X-ray photoelecttron spectroscopy (HXPS) combined with conventional XPS.