Singular structures in <em>m</em>-plane AlInN/GaN heterostructures grown by MOVPE (2)

Yuya Inatomi; Akira Kusaba; Koichi Kakimoto; Yoshihiro Kangawa; Kazunobu Kojima; Sigefusa chichibu

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[17p-E202-1~19] 15.4 III-V-group nitride crystals

Sat. Mar 17, 2018 1:15 PM - 6:30 PM E202 (57-202)

Motoaki Iwaya(Meijo Univ.), Yoshio Honda(Nagoya Univ.), Yoshiki Saito(TS Opto)

1:30 PM - 1:45 PM

△ [17p-E202-2] Singular structures in m-plane AlInN/GaN heterostructures grown by MOVPE (2)

〇Yuya Inatomi¹, Akira Kusaba¹, Koichi Kakimoto^1,2, Yoshihiro Kangawa^1,2,3, Kazunobu Kojima⁴, Sigefusa chichibu^4,3 (1.Kyushu Univ., 2.RIAM, Kyushu Univ., 3.IMaSS, Nagoya Univ., 4.IMRAM, Tohoku Univ.)

Keywords:semiconductor, AlInN, MOVPE

We conducted the theoretical analysis to elucidate the formation mechanism of the singular structure observed in AlInN epitaxial layers grown on low defect density m-plane freestanding GaN substrate by metalorganic vapor phase epitaxy (MOVPE).