[17p-E202-1~19] 15.4 III-V-group nitride crystals

△ [17p-E202-4] AlInN/GaN DBRs for long-wavelength GaN-based VCSELs

〇(B)Kei Hiraiwa¹, Junichiro Ogimoto¹, Yasuto Akatsuka¹, Wataru Muranaga¹, Takanobu Akagi¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.ARC, Nagoya Univ.)

Keywords:VCSELs, DBRs, AlInN/GaN

In this study, for the realization of GaN-based long wavelength VCSEL with AlInN/GaN DBR, 40 pair AlInN/GaN DBR with stop band in long wavelength region (~ 570 nm) was fabricated. The reflectance of 99.0% was realized even in the 570 nm band.