The 65h JSAP Spring Meeting, 2018

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9 Applied Materials Science » 9.4 Thermoelectric conversion

[17p-F102-1~17] 9.4 Thermoelectric conversion

Sat. Mar 17, 2018 1:45 PM - 6:30 PM F102 (61-102)

Kaoru Toko(Univ. of Tsukuba), Yoshiaki Nakamura(Osaka Univ.), Kei Hayashi(Tohoku Univ.), Yukari Katsura(Univ. of Tokyo)

3:00 PM - 3:15 PM

[17p-F102-6] Thermodynamical Stability at Bonding Interface of (Sb, Zn) doped Mg2Si

〇Yumi Masuoka1, Ryoji Asahi1 (1.Toyota CRDL)

Keywords:Magnesium silicide, doping, thermoelectric

Magnesium silicide can be improved by several doping while the doping species are often segregated at grain boundary or bonding interface, which may result in instability of the thermoelectric device. We studied thermodynamical stability at bonding interface of doped magnesium silicide and Ni electrode. As a result, we found the co-doping of Sb and Zn can improve the stability and reliability.