[17p-F104-1~16] 12.2 評価・基礎物性

▲ [17p-F104-7] Quinoidal Fused Oligosilole Derivative Single Molecular Transistor

〇(D)SeungJoo Lee¹、Younsu Jung¹、Tomohiro Tsuda²、Ryo Takano²、Ryo Shintani³、Kyoko Nozaki²、Yutaka Majima¹ (1.Tokyo Tech.、2.Univ. Tokyo、3.Osaka Univ.)

キーワード：Quinoidal Fused Oligosilole Derivative, Single Molecular Transistor

Molecular transistors have been considered as one of the alternative for a next-generation transistor because a π-conjugated molecule has its unique structure with a few nm scale, and the molecular energy levels can be in use. Here, Si-bridged quinoidal fused oligosilole derivative (Si-2) which has an 20π conjugated structure with two silicon atoms (Figure 1) was introduced between electroless Au-plated (ELGP) nanogap Pt electrodes to fabricate molecular transistor. This quinoidal fused oligosilole derivative is very stable under charged states and air ambient condition because silicon atoms can effectively suppress molecular interactions. The width and length of Si-2 are 1.6 nm and 1.8 nm, respectively. Two SH groups can directly chemisorb onto Au electrodes by strong S-Au bonding.2 I_d-V_d characteristics and dI_d/dV_d-V_d characteristics clearly showed gate voltage dependence as shown in Figure 2a. I_d-V_g characteristics under the application of drain voltages also showed gate oscillation (Figure 2b). Consequently, Si-2 single molecular transistor operations have been reproducibly measured at 9 K. This study was partially supported by MEXT Elements Strategy Initiative to Form Core Research Center from the Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan; and the BK Plus program, Basic Science Research (NRF-2014R1A6A1030419).