[17p-F202-1~12] 9.5 New functional materials and new phenomena

△ [17p-F202-3] Gate Control of the Surface Conduction of a Bulk-resistive Topological Insulator

〇Tetsuro Misawa^1,2, Yasuhiro Fukuyama², Shuji Nakamura², Yuma Okazaki², Nariaki Nasaka¹, Nobu-Hisa Kaneko², Takao Sasagawa¹ (1.Tokyo Tech, 2.AIST)

Keywords:topological insulator, gate controle, device

Topological insulators are expected to be applied to electronic and spin devices as they have high mobility and spin-lifted bands. For application, control of surface electron conduction by gating is necessary. Since even a thin flake of a topological insulator has top/bottom surfaces which electric current go through, the necessity for Fermi surface control by multiple gate structures is beginning to be recognized. In this talk, the gate control of the surface conduction of the highly bulk-resistive topological insulator Sn-BSTS will be presented.