[17p-F210-1~14] 9.3 ナノエレクトロニクス

▲ [17p-F210-3] Probing Degeneracy of Discrete Electronic States of Colloidal Quantum Dots

〇Satria Zulkarnaen Bisri¹、Maria Ibanez^2,3、Maksym V. Kovalenko^2,3、Yoshihiro Iwasa^1,4 (1.RIKEN-CEMS、2.ETH Zurich、3.EMPA、4.Univ. Tokyo)

キーワード：colloidal quantum dots, carrier doping, degenerated electronic states

Investigation of carrier transport and electronic properties of highly-crosslinked ligand-exchanged colloidal quantum dot (QD) assemblies is vital for the utilization of these class of materials in diverse emerging practical applications. For those applications, some certain doping levels are required; thus knowledge on how many electrons can sit for each QD discrete energy levels is vital. So far, it is still too difficult to elucidate degeneracy information only from the optical characterization of the QD assemblies. Here we demonstrate the probing of the electronic state degeneracy of PbS QD assemblies via measurement of electronic transport using ionic-liquid-gated transistor. The observation of negative transconductance and conductivity peaks of the EDLT at some certain carrier density value is attributed to the half-filling of the discrete energy band of the QDs, from which the numbers of electronic state degeneracy can be counted.