14:15 〜 14:30
▲ [17p-F210-4] Chemically Assembled InP@ZnS Quantum Dot Single-Electron Transistor
キーワード：Single electron transistor, InP@ZnS Quantum dot
Recently, as transistor scaling has been stalled and its performance improvement has been limited, there have been strong demands for development of new types of transistor. In this respect, single-electron transistors (SETs) is expected as one of the strong candidates for switching devices because of small size, low power consumption, high speed operation, single-electron sensitivity and adoption of multi-gate logic circuits. We have demonstrated logic operations of SETs by using the critical dimensional electroless Au plated (ELGP) nanogap electrodes with 40 nm scale in linewidth and Au nanoparticles (NPs) as Coulomb island [1, 2], However, it is still necessary to reduce electrode linewidth toward less than sub-20nm for obtaining larger gate capacitance. Moreover, our ELGP nanogap electrodes have limitation in fabrication of the fine patterned electrodes with sub-20 nm linewidth due to Rayleigh instability. In this point of view, Pt is a good candidate material for the robust and fine patterned initial electrodes with sub-20nm linewidth against Rayleigh instability. Furthermore, new types of NPs instead of Au NPs as Coulomb island need to be considered for the unique electrical characteristics and the additional functionality. In this respect, colloidal quantum dots (QDs) could be one of the interesting candidates of NPs as Coulomb islands owing to their tailored size and electronic/optical properties by simple QDs growth control.Here we introduce InP@ZnS QDs between robust fine ELGP Au nanogap based on Pt electrodes for exploring novel functions into SETs. By combination of the Pt-based Au nanogap electrodes and InP@ZnS QDs, the chemically assembled InP@ZnS QD SETs were fabricated successfully and exhibited the stable switching characteristics with gate bias voltage at 9K