14:45 〜 15:00
▲ [17p-F210-6] Analysis of High-Frequency Rectifying Characteristics of Single-Electron Transistor
キーワード：Si- single electron transistor, High frequency rectifying characteristics
It has been reported experimentally that there seems nocutoff frequency in the rectifying operation of single electron transistor (SET). In order to understandthis, frequency dependence of the rectifying current is simulated, and theoretical explanation of the phenomena is attempted in this report.
The simulation is based on the time-dependent master equation considering the four states of electron number n in the SET island.
And finally after all the conclusion and analysis we concluded that, there is no cutoff frequency in the rectifyingoperation of SETs, and the asymmetry in thetunneling rate with respect to the drain voltage is
responsible at high frequencies.
The simulation is based on the time-dependent master equation considering the four states of electron number n in the SET island.
And finally after all the conclusion and analysis we concluded that, there is no cutoff frequency in the rectifyingoperation of SETs, and the asymmetry in thetunneling rate with respect to the drain voltage is
responsible at high frequencies.