Analysis of Bi compositional distribution of MBE-grown GaAs/GaAsBi quantum wells on GaAs substrates

Akira Tsukamoto; Itou Eigo; Higaki Kouichiro; Tanaka Saburo; Ishikawa Humitaro; Shimomura Satoshi

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[17p-F214-1~14] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Sat. Mar 17, 2018 1:45 PM - 5:30 PM F214 (61-214)

Takashi Kita(Kobe Univ.), Akihiro Wakahara(Toyohashi Tech)

4:45 PM - 5:00 PM

[17p-F214-12] Analysis of Bi compositional distribution of MBE-grown GaAs/GaAsBi quantum wells on GaAs substrates

〇(M1)Akira Tsukamoto¹, Itou Eigo¹, Higaki Kouichiro¹, Tanaka Saburo¹, Ishikawa Humitaro¹, Shimomura Satoshi¹ (1.Ehime Univ.)

Keywords:semiconductor, MBE, GaAsBi

We investigated whether Bi atoms distributed from the composition map of STEM - EDS are randomly distributed or out of the random distribution of Bi composition distribution of MBE grown GaAs / GaAs Bi quantum well.