[17p-F314-1~13] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[17p-F314-13] Spin relaxation time of GaSb/AlSb multiple quantum wells (Ⅱ)

〇Yuichi Nakamura¹, Lianhe Li², Kizuku Yamada¹, Takuya Kamezaki¹, Edmund Linfield², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.Univ of Leeds)

Keywords:spin relaxation, GaSb/AlSb MQWs, pump and probe measurements

In this research, we investigated the spin relaxation in GaSb/AlSb multiple quantum wells (MQWs) with 48 nm well width grown on GaAs substrate by time-resolved spin-dependent pump and probe reflection measurements. As a result, the spin relaxation time was 60 ps at 10 K. Because this relaxation time is longer from the result of the GaSb/AlSb MQWs with 13.4 nm well width which we reported before (38 ps), I think this research has the important meaning that can contribute to elucidation of the spin relaxation mechanism especially in GaSb MQWs which is not actively reported.