[17p-P1-1~12] 1.1 Interdisciplinary and General Physics

[17p-P1-11] Formation of GaAs nanowire passivation structure using GaAs/AlGaAs heterostructure and native-oxide AlGaOx outermost shell

〇(M1)Naoki Tsuda¹, Fumitaro Ishikawa¹ (1.Ehime Univ.)

Keywords:semiconductor, nanowire, GaAs

III-V compound semiconductor GaAs nanowire has a high luminous efficiency such that a single nanowire itself functions as a laser. On the other hand, the influence of surface nonradiative recombination is remarkable for the same material, and various attempts to suppress this have been made. In the fabrication of AlGaAs / GaAs core shell nanowires, we tried to naturally oxidize the AlGaAs layer and grow AlGaAs passivation layer inside nanowire. The results of evaluating the fabricated nanowire are reported.