[17p-P10-1~93] 10 Spintronics and Magnetics（Poster）

[17p-P10-2] STM / STS measurements of Mn atoms in Group III-V semiconductors

〇Miyuki Ando¹, Shigeru Kaku¹, Junji Yoshino¹ (1.Tokyo Tech.)

Keywords:Magnetic Semiconductor, Scanning Tunneling Microscope

The hole state bound to a Mn acceptor in III-V semiconductors has a strongly anisotropic shape which is even more pronounced at cleaved (110) surfaces. Recent scanning tunneling microscopy (STM) measurements revealed the hole state bound to a Mn acceptor in III-V semiconductors such as GaAs, InAs and InSb. In this study, we measure GaSb:Mn which had not reported STM images so far and show that the STM image of GaSb: Mn has a triangular shape.