[17p-P10-1~93] 10 スピントロニクス・マグネティクス（ポスター）

▼ [17p-P10-35] Anisotropic Magnetoresistance Effects in Epitaxial Thin Films of Mn₂VAl Full-Heusler Alloy

〇Kenji Fukuda¹、Mikihiko Oogane¹、Masakiyo Tsunoda¹、Yasuo Ando¹ (1.Tohoku Univ.)

キーワード：Heusler alloy, anisotropic magnetoresistance effect, ferrimagnet

The anisotropic magnetoresistance (AMR) effects were investigated in the epitaxial thin films of full-Heusler ferrimagnet, Mn₂VAl. The observed AMR curves contained the cos4θ component caused by the tetragonal distortion, in addition to the conventional cos2θ component. The negative AMR was observed at 10-300K range, which indicated the prepared films were possible to possess half-metallicity.