[17p-P10-1~93] 10 Spintronics and Magnetics（Poster）

▲ [17p-P10-4] Spin relaxation in bulk GaSb grown at different temperatures on GaAs substrate

〇Daisuke Tanaka¹, Lianhe Li², Shima Tanigawa¹, Masayuki Iida¹, Masaya Takizawa¹, Edmund Linfield², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.Univ. of Leeds)

Keywords:spin relaxation, GaSb

GaSb materials grown on GaAs substrates are promising. But a lattice mismatch of ∼7% exists between GaSb and GaAs. In this study, we have investigated the spin relaxation in GaSb grown on a GaAs substrate at different growth temperatures. The observed spin relaxation times are different at different growth temperatures. This indicates that the crystal qualities affect the spin relaxation.