[17p-P10-1~93] 10 スピントロニクス・マグネティクス（ポスター）

▲ [17p-P10-4] Spin relaxation in bulk GaSb grown at different temperatures on GaAs substrate

〇Daisuke Tanaka¹、Lianhe Li²、Shima Tanigawa¹、Masayuki Iida¹、Masaya Takizawa¹、Edmund Linfield²、Atsushi Tackeuchi¹ (1.Waseda Univ.、2.Univ. of Leeds)

キーワード：spin relaxation, GaSb

GaSb materials grown on GaAs substrates are promising. But a lattice mismatch of ∼7% exists between GaSb and GaAs. In this study, we have investigated the spin relaxation in GaSb grown on a GaAs substrate at different growth temperatures. The observed spin relaxation times are different at different growth temperatures. This indicates that the crystal qualities affect the spin relaxation.