[17p-P12-1~27] 13.7 Compound and power electron devices and process technology

[17p-P12-15] Hole traps in AlGaN/GaN HEMT studied by MCTS

〇(B)Kazuya Tamura¹, Yutaka Tokuda¹ (1.Aichi Inst. of Technol)

Keywords:HEMT, MCTS

We have characterized traps in AlGaN/GaN HEMTs by MCTS. MCTS measurements were performed using above-bandgap-light pulses under constant gate bias. Light pulse widths were varied in the range from 1 ms to 100 s. MCTS measurements with the light pulses above 1 s confirmed H1 hole trap which is present in GaN. It is found that there are several peaks in addition to H1 in isothermal MCTS spectra at 300 K with the light pulse width range from 1 ms to 0.5 s. Similar experiments are planned for n-GaN Schottky diodes and their results will be compared to those obtained for HEMTs.