[17p-P12-1~27] 13.7 Compound and power electron devices and process technology

[17p-P12-16] DLTS studies of deformed n-GaN

〇(B)Syun Ito¹, Yutaka Tokuda¹, Ichiro Yonenaga² (1.Aichi Inst. Techol., 2.Tohoku University)

Keywords:dislocations, DLTS

We have characterized traps in deformed HVPE-grown n-GaN by DLTS where dislocations are intentionally introduced in HVPE n-GaN with low dislocation density (~105 cm-2). Two electron traps labelled A, B are observed. In comparison with DLTS spectrum for MOVPE n-GaN on SiC, traps A and B correspond to traps E1 (Ec-0.23 eV) and E7 (Ec-0.73 eV) observed in n-GaN on SiC. However, DLTS spectra for traps A and B are broader than those for E1 and E7, respectively. The dependence of DLTS signals on capture bias pulse width are being measured and the comparison between them will be made.