[17p-P12-1~27] 13.7 Compound and power electron devices and process technology

[17p-P12-17] Mg recoil implantation into GaN with incident Nitrogen ion (2)

〇Toshikazu Yamada¹, Hisashi Yamada¹, Noriyuki Taoka¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1.AIST GaN-OIL)

Keywords:GaN, recoil, implantation