[17p-P12-1~27] 13.7 Compound and power electron devices and process technology

[17p-P12-21] Annealing temperature dependency of directly-bonded SiC/Si junction characteristics

〇Kazufumi Shimozato¹, Jianbo Liang¹, Manabu Arai², Naoteru Shigekawa¹ (1.Osaka City Univ., 2.New Japan Radio Co. Ltd)

Keywords:direct bonding, SiC, Si