[17p-P12-1~27] 13.7 Compound and power electron devices and process technology

[17p-P12-26] Characterization of AlGaAs / GaAs / AlGaAs Double Heterostructure with a Pair of Electron and Hole Channels

〇Takahiro Obo¹, Kushida Tomoyoshi², Teuku Roffi¹, iwata naotaka¹ (1.Toyotakougyou Inst, 2.Toyota Motor Corp)

Keywords:superjunction

To make power devices with lower losses and higher power handling capabilities, heterostructure superjunctions devices with low on-resistance and high breakdown voltage performance become an attractive solution.In this study, an AlGaAs / GaAs / AlGaAs 4-terminal test device with a pair of two-dimensional electron and hole channels was investigated.The electron and hole channel doping concentrations are 2 × 10 12 cm -2 respectively.The characterizations of each channel revealed that the electron channel current can be controlled by the voltage applied to the hole channel, and the situation is same for the hole channel current control with the electron channel biasing.The same threshold voltage 16 V was obtained.