Physical and Electrical Properties of SiO<sub>2</sub> Film Annealed by High Pressure Water Vapor

Presentation information

Poster presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

Sat. Mar 17, 2018 4:00 PM - 6:00 PM P12 (P)

4:00 PM - 6:00 PM

〇Ryota Ando¹, Mutsunori Uenuma¹, Yuta Fujimoto¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

Keywords:High Pressure Water Vapor Annealing, GaN