[17p-P12-1~27] 13.7 Compound and power electron devices and process technology

[17p-P12-8] Photoluminescence from n-GaN oxidized by remote plasma

〇Noriharu Takada¹, Taishi Yamamoto^1,2, Noriyuki Taoka², Akio Ohta¹, Truyen Nguyen Xuan^1,2, Hisashi Yamada², Tokio Takahashi², Mitsuhisa Ikeda¹, Katsunori Makihara¹, Mitsuaki Shimizu¹, Seiichi Miyazaki¹ (1.Nagoya Univ., 2.AIST GaN-OIL)

Keywords:GaN, photoluminescence, defect

Si-doped GaN surface was oxidized by remote plasma. In order to reveal the oxidation mechanism and the interface state, we examined the photoluminescence characteristics. The results showed that a sample oxidized at 300 degrees Celsius had lower intensity in Yellow band compared with that at 500 degrees Celsius and a sample without the oxidation process. This band has been proposed to be due to defects with Ga vacancies and so on. Therefore, we can deduce that the defect density at the vicinity of GaN surface was changed by the oxidation processes. This work was partly supported by NEDO.