[17p-P3-1~22] 3.13 Semiconductor optical devices

[17p-P3-1] Fabrication of polycrystalline selenium with high crystallinity and surface flatness using lateral grain growth by the effect of surface capping

〇Shigeyuki Imura¹, Keitada Mineo¹, Kazunori Miyakawa¹, Masakazu Nanba¹, Hiroshi Ohtake¹, Misao Kubota¹ (1.NHK STRL)

Keywords:crystalline selenium, galium oxide, image sensor

Recently, because of the trend toward high-resolution CMOS image sensors, there has been a problem about decreasing of sensitivity. We are developing the high-sensitivity CMOS image sensors overlaid with crystalline selenium films. To enhance the crystallinity of c-Se, it is necessary to make crystal grains larger to reduce the grain boundaries, however, surface flatness of c-Se films is deteriorating. In this study, we successfully fabricated c-Se film with high crystallinity and surface flatness using lateral grain growth by introducing the ITO capping layer before the annealing at high temperature.