2018年第65回応用物理学会春季学術講演会

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3 光・フォトニクス » 3.12 ナノ領域光科学・近接場光学

[18a-A402-1~11] 3.12 ナノ領域光科学・近接場光学

2018年3月18日(日) 09:00 〜 12:00 A402 (54-402)

岩長 祐伸(物材機構)

11:45 〜 12:00

[18a-A402-11] Evaluation of the polarization dependence of an electron spin properties of NV nanodiamond through a near-field etching approach

〇(D)Felix Julian Brandenburg1、R Nagumo1、K Tahara2,3、M Hatano2,3、Fedor Jelezko4、Takashi Yatsui1 (1.University of Tokyo, School of Engineering、2.Tokyo Institute of Technology、3.CREST, Japan Science and Technology Agency、4.Ulm University)

キーワード:near-field etching, nanodiamond, nitrogen-vacancy center

Our previous studies already showed that a near-field (NF) etching (Fig.1(a)) is able to improve T2 coherence times of nitrogen-vacancy (NV) centers in nanodiamonds [1]. In this paper we want to further display how the NF-etching changes the optically detected magnetic resonance (ODMR) spectrum (Fig.1(b)) of nanodiamond NVs and the T2 Hahn-Echo envelope (Fig. 1(c)).
Far-field light irradiation induces charges at sub-wavelength objects, resulting in the generation of an optical near-field (ONF) around these objects which interacts with matter within sub-wavelength distance to the object (such as gas molecules). Radical oxygen atoms [2,3] are believed to interact with their immediate environment and therefore causing the etching.
To evaluate the polarization-dependent etching [4], we further checked how NF-etching changes the shape of the nanodiamonds along the parallel and perpendicular axis (Figs.1(d) and (e)). Remarkably, the graphical results revealed that the parallel component experienced a higher etching ratio than the perpendicular component, if only slightly.
References [1] F. Brandenburg et al., APNFO11, (2017), paper ID: Contr 10-6. [2] D. Keilin & E.F. Hartree, Nature, 165, (1950), 543-544. [3] P.K. Jain et al., Proc. Natl. Acad. Sci. U. S. A., 109, (2012), 8016. [4] T. Yatsui et al., Light: Science & Applications, 5, (2016), e16054 (7 pages)