[18a-B203-1~11] 3.13 Semiconductor optical devices

[18a-B203-5] Response of Electron Spin Polarization Modulation in InAlGaAs VCSELs

〇Nobuhide Yokota¹, Kunpei Nisaka¹, Hiroshi Yasaka¹, Kazuhiro Ikeda² (1.Tohoku Univ., 2.AIST)

Keywords:VCSEL, spin polarization, birefringence

High-speed VCSELs have been required for data communications with low cost and low energy consumption. In this study, we investigate novel characteristics of electron spin polarization modulation in a VCSEL by using a polarization modulation of pump light. A response for the polarization modulation shows a wide 3-dB bandwidth of 22 GHz and resonance peak at 19 GHz corresponding to the linear birefringence of the VCSEL.