[18a-B301-1~11] 13.1 Si系基礎物性・表面界面・シミュレーション

▼ [18a-B301-10] A study on the stability of Pd₂Si formed by RF magnetron sputtering

〇(D)RengieMark Domincel Mailig¹、Yuya Tsukamoto¹、Sohya Kudoh¹、Shun-ichiro Ohmi¹ (1.Tokyo Tech)

キーワード：silicide, MOSFET

In this work, the properties of palladium silicide were investigated as a possible candidate to replace the conventional MISFET S/D to realize the low thermal budget gate-first process.