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[18a-B301-6] Electronic structure prediction of oxygen vacancy in Si/SiO2 by first principle calculation
Keywords:Si/SiO2, oxygen vacancy, first principle calculation
Electronic structure of oxygen vacancy in Si/SiO2 is predicted by first principle calculation. By relaxing around oxygen vacancy, Defect level is not found between valance band and conductance band. It is estimated that anneal process is important of Si-MOSFET.