[18a-B301-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18a-B301-6] Electronic structure prediction of oxygen vacancy in Si/SiO₂ by first principle calculation

〇Tomoki Ishikawa¹, Kaku Taniuchi¹, Yukihiko Uchi¹, Takahiro Yamamoto² (1.AsahiKASEI, 2.Tokyo Univ. of Sci.)

Keywords:Si/SiO2, oxygen vacancy, first principle calculation

Electronic structure of oxygen vacancy in Si/SiO₂ is predicted by first principle calculation. By relaxing around oxygen vacancy, Defect level is not found between valance band and conductance band. It is estimated that anneal process is important of Si-MOSFET.