2018年第65回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

8 プラズマエレクトロニクス » 8.6 Plasma Electronics English Session

[18a-C204-1~5] 8.6 Plasma Electronics English Session

2018年3月18日(日) 09:00 〜 10:15 C204 (52-204)

呉 準席(名城大)

09:30 〜 09:45

[18a-C204-3] Molecular Dynamics Simulation for Physical Sputtering of Surfaces made of Lennard-Jones Atoms

Nicolas Aini Mauchamp1、Michiro Isobe1、Satoshi Hamaguchi1 (1.Osaka University)

キーワード:MD Simulation, Plasma etching

Collision cascade dynamics has been widely studied experimentally and theoretically. However, even for particles interacting via simple two-body potential functions such as Lennard-Jones potential functions, the exact dependence of the sputtering yield on the potential functions has not been well understood yet. The goal of this study is to evaluate the sputtering yield of a surface made of particles interacting with Lenard-Jones potential by the injection of energetic particles of fully repulsive interaction.