11:15 AM - 11:30 AM
[18a-C302-9] Dependence of etching selectivity on Al composition of GaN / AlGaN Heterostructure
Keywords:Nitride semiconductor, Selective dry etching
Oral presentation
13 Semiconductors » 13.7 Compound and power electron devices and process technology
Sun. Mar 18, 2018 9:00 AM - 12:15 PM C302 (52-302)
Kenji Shiojima(Univ. of Fukui)
11:15 AM - 11:30 AM
Keywords:Nitride semiconductor, Selective dry etching