Analysis of interface workfunction and process-induced damage in transition-metal-oxide/passivation-layer/Si structures for carrier-selective contacts: ALD-TiO<sub>x</sub>

Takefumi Kamioka; Takeya Mochizuki; Kazuhiro Gotoh; Yutaka Hayashi; Yuki Isogai; Kyotaro Nakamura; Noritaka Usami; Yoshio Ohshita

Presentation information

Oral presentation

16 Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[18a-D101-1~10] 16.3 Bulk, thin-film and other silicon-based solar cells

Sun. Mar 18, 2018 9:00 AM - 11:45 AM D101 (56-101)

Toshie Kunii(Panasonic), Kazuyoshi Nakada(Tokyo Institute of Technology)

11:30 AM - 11:45 AM

[18a-D101-10] Analysis of interface workfunction and process-induced damage in transition-metal-oxide/passivation-layer/Si structures for carrier-selective contacts: ALD-TiO_x

〇(PC)Takefumi Kamioka¹, Takeya Mochizuki², Kazuhiro Gotoh², Yutaka Hayashi¹, Yuki Isogai¹, Kyotaro Nakamura³, Noritaka Usami², Yoshio Ohshita¹ (1.TTI, 2.Naogya Univ., 3.Meiji Univ.)

Keywords:TiOx, workfunction, C-V analysis

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Presentation information

[18a-D101-1~10] 16.3 Bulk, thin-film and other silicon-based solar cells

[18a-D101-10] Analysis of interface workfunction and process-induced damage in transition-metal-oxide/passivation-layer/Si structures for carrier-selective contacts: ALD-TiOx

[18a-D101-10] Analysis of interface workfunction and process-induced damage in transition-metal-oxide/passivation-layer/Si structures for carrier-selective contacts: ALD-TiO_x