Effects of Interface Layers for the Heusler Based Current-perpendicular-to-plane giant Magnetoresistance Junctions

Takahide Kubota; Yusuke Ina; Zhenchao Wen; Koki Takanashi

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.3 Spin devices, magnetic memories and storages

[18a-D104-4~11] 10.3 Spin devices, magnetic memories and storages

10.1と10.2と10.3のコードシェアセッションあり

Sun. Mar 18, 2018 10:00 AM - 12:00 PM D104 (56-104)

Shigemi Mizukami(Tohoku Univ.)

10:00 AM - 10:15 AM

▲ [18a-D104-4] Effects of Interface Layers for the Heusler Based Current-perpendicular-to-plane giant Magnetoresistance Junctions

〇Takahide Kubota^1,2, Yusuke Ina¹, Zhenchao Wen^1,2, Koki Takanashi^1,2 (1.IMR, Tohoku Univ., 2.CSRN, Tohoku Univ.)

Keywords:CPP-GMR, Heusler alloy, magnetoresistance effect

Interfacee tailoring effects were investiagted for Co₂(Fe,Mn)Si/Ag₃Mg/Co₂(Fe,Mn)Si CPP-GMR junctions. MR ratio decreased with Fe or Mg inserts, on the other hands, the output voltage nearly independent of the insertion. The detail will be discussed at the presentation.