[18a-D104-4~11] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▲ [18a-D104-6] CPP-GMR spin-valves with AgSn/InZnO spacers

〇Tomoya Nakatani¹、Muftah Al-Mahdawi¹、Taisuke Sasaki¹、Yuya Sakuraba¹、Kazuhiro Hono¹ (1.NIMS)

キーワード：GMR, Spacer layer, Heusler alloys

We fabricated spin-valve type CPP-GMR devices with Co₂(Mn_0.6Fe_0.4)Ge Heusler alloy ferromagnetic layers and a AgSn/InZnO (IZO) spacer. The MR ratio was 30% at RA = 0.1 Ω μm² at room temperature. The resistance in the parallel magnetization state decreased as temperature was decreased, indicating a metallic electronic conduction in the device. The MR ratio monotonously increased as decreasing temperature and reached 95%, which suggests a large spin polarization of CMFG at low temperature.