The 65h JSAP Spring Meeting, 2018

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10 Spintronics and Magnetics » 10.3 Spin devices, magnetic memories and storages

[18a-D104-4~11] 10.3 Spin devices, magnetic memories and storages

10.1と10.2と10.3のコードシェアセッションあり

Sun. Mar 18, 2018 10:00 AM - 12:00 PM D104 (56-104)

Shigemi Mizukami(Tohoku Univ.)

11:15 AM - 11:30 AM

▼ [18a-D104-9] Write-error rate of perpendicular-anisotropy CoFeB/MgO-based magnetic tunnel junction with different junction diameters

〇Takaharu Saino1, Hideo Sato1,2,3,4, Shunsuke Fukami1,2,3,4, Hideo Ohno1,2,3,4,5 (1.RIEC. Tohoku Univ., 2.CSRN. Tohoku Univ., 3.CSIS. Tohoku Univ., 4.CIES. Tohoku Univ., 5.WPI. Tohoku Univ.)

Keywords:Spintronics, magnetic tunnel junction, write error rate