Fabrication of GaN micro hexagonal frustum for high directional micro-LED (2)

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Sun. Mar 18, 2018 9:00 AM - 11:45 AM E202 (57-202)

Narihito Okada(Yamaguchi Univ.), Shugo Nitta(Nagoya Univ.)

11:30 AM - 11:45 AM

〇Naoto Kumagai¹, Tokio Takahashi¹, Guangwei Cong¹, Xuelun Wang¹, Misato Satoshi¹ (1.AIST)

Keywords:Nitride semiconductor, MOCVD, Selective area growth