[18a-G203-1~10] 13.5 Semiconductor devices and related technologies

[18a-G203-1] [Young Scientist Presentation Award Speech] Charge-pumping electrically-detected magnetic resonance for detection of dangling bonds at silicon MOS interface

〇Masahiro Hori¹, Toshiaki Tsuchiya¹, Yukinori Ono¹ (1.Shizuoka Univ.)

Keywords:interface defect, silicon MOSFET, charge pumping