[18a-G203-1~10] 13.5 Semiconductor devices and related technologies

[18a-G203-7] Influence of Quantum Effect on GaAsSb/ InGaAs Double Gate Tunnel FET
- How to handle hole bands-

〇Shogo Kunisada¹, Koichi Fukuda^1,2, Yasuyuki Miyamoto¹ (1.Tokyo Tech., 2.AIST)

Keywords:Tunnel FET, device simulation, hole effective mass

We describe the simulation method of TFET with quantum effect taken into account and the influence of quantum effect obtained. Schrödinger-Poisson was analyzed to find the first subband energy of the conduction band and the valence band. This subband energy is regarded as an effective bandgap widening, and device simulation is performed by reflecting it in the band parameter. We will discuss especially the handling of heavy holes and light holes.